Munaf Rahimo
Named IEEE Fellow
We are pleased to announce that our founder Dr. Munaf Rahimo was elevated to a 2023 IEEE Fellow for contributions to high-voltage insulated gate bipolar transistors for grid applications. The Institute of Electrical and Electronics Engineers IEEE Fellow is a distinction reserved for select members whose exceptional accomplishments in any of the IEEE fields of interest are deemed fitting of this prestigious grade elevation.
https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/fellows/2023-newly-elevated-fellows.pdf
During his 30-year career working on power semiconductor devices, Dr. Rahimo pioneered and developed a wide range of robust and efficient power semiconductor devices. At ABB Switzerland, he pioneered the SPT/SPT+ IGBT, the BIGT and the HPT IGCT where products based on these device concepts are employed globally in many power electronics applications including grid systems, industrial drive and railway traction and renewable converters. For example, the BIGT has enabled VSC based HVDC systems to reach power levels up to 3 GW with extremely low losses such as for the Dogger Bank off-shore wind farm in the UK. (https://www.hitachienergy.com/products-and-solutions/semiconductors/semiconductors-newsletter/world-s-most-powerful-press-pack-for-the-world-s-largest-offshore-wind-farm)
Dr. Rahimo holds his B.Sc. (1990) in Electrical Engineering from Baghdad University in Iraq and his M.Sc. (1993) and Ph.D. (1996) from Staffordshire University in the UK. He also holds an M.B.A. (2006) in international business from the Swiss Business School in Zurich, Switzerland. He is a Fellow at the IET and has published more than 200 papers and holds more than 50 US and 40 EP granted patents.
mqSemi AG directors Munaf Rahimo and Iulian Nistor
Our S-MOS Technology at ISPSD`2021
We are pleased to announce that our paper entitled "Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT" has been selected for an oral presentation at the upcoming 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) which will be held between 30th of May and 3rd of June, 2021 at Nagoya, Japan (www.ispsd2021.com).
We will be presenting our paper in the IGBT Oral session on the virtual conference platform on Tuesday, 1st of June , 2021 ( https://ispsd2021.com/program.html )
The breakthrough S-MOS technology represents a paradigm shift in how
future MOS-based transistor cells can be designed and operated. The proof of concept was demonstrated using advanced 3D-TCAD simulations in cooperation with SILVACO (www.silvaco.com). The paper will discuss in detail the S-MOS design concept and key performance parameters, such as achieving low on-state losses at very high current densities, high voltage blocking capability, and optimized switching and short circuit performance.
Adjustable Switch Hybrid at PCIM`2021
mqSemi AG is collaborating with academia and MTAL GmbH (www.mtal.ch) to develop an advanced Adjustable Hybrid Switch (AHS) automotive converter concept. The technology will be presented in the paper entitled "An Advanced Adjustable Switch Hybrid (ASH) Concept for High Power Automotive Converters" at the PCIM Europe 2021 which will be held digitally from 3rd to 7th of May 2021 (PCIM Europe – the international event in power electronics (mesago.com))
The presentation will be presented in the "Automotive Applications II" session on the virtual conference platform on Friday, 7th of May, 2021 ( Program - PCIM Europe - Mesago)
